Analysis of Device Parameter Variations in In1−xGaxAs Based Gate Stacked Double Metal Surrounding Gate Nanowire MOSFET
Crossref DOI link: https://doi.org/10.1007/s42341-023-00478-0
Published Online: 2023-10-16
Published Print: 2023-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kumar, Parveen http://orcid.org/0000-0001-7392-8844
Sharma, Sanjeev Kumar
Raj, Balwinder
Text and Data Mining valid from 2023-10-16
Version of Record valid from 2023-10-16
Article History
Received: 24 April 2023
Revised: 14 September 2023
Accepted: 16 September 2023
First Online: 16 October 2023
Declarations
:
: Authors declare that there is no conflict of Interest.