Applicability of Channel Doping Gradient in the Design of a Short Channel (0.1 µm) LDMOS Transistor for Integrated Power and RF Applications
Crossref DOI link: https://doi.org/10.1007/s42341-024-00530-7
Published Online: 2024-04-04
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Fayaz, Sahar http://orcid.org/0000-0002-3550-5338
Hakim, Najeeb-ud-din
Rather, G. M.
Text and Data Mining valid from 2024-04-04
Version of Record valid from 2024-04-04
Article History
Received: 26 June 2023
Revised: 28 February 2024
Accepted: 7 March 2024
First Online: 4 April 2024
Declarations
:
: The authors declare no conflict of interest.