Radiated disturbance characteristics of SiC MOSFET module
Crossref DOI link: https://doi.org/10.1007/s43236-020-00187-4
Published Online: 2020-12-02
Published Print: 2021-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Huang, Huazhen
Wang, Ningyan
Wu, Jialing
Lu, Tiebing http://orcid.org/0000-0003-3270-0346
Funding for this research was provided by:
Research Project of State Grid of China (52130419000M)
Text and Data Mining valid from 2020-12-02
Version of Record valid from 2020-12-02
Article History
Received: 29 July 2020
Revised: 11 November 2020
Accepted: 13 November 2020
First Online: 2 December 2020