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Conversion of an ultra-wide bandgap amorphous oxide insulator to a semiconductor

Crossref DOI link: https://doi.org/10.1038/am.2017.20

Published Online: 2017-03-10

Published Print: 2017-03

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Kim, Junghwan https://orcid.org/0000-0001-9168-6260
Sekiya, Takumi

Miyokawa, Norihiko

Watanabe, Naoto

Kimoto, Koji

Ide, Keisuke

Toda, Yoshitake

Ueda, Shigenori

Ohashi, Naoki

Hiramatsu, Hidenori

Hosono, Hideo

Kamiya, Toshio
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Article History

Received: 14 November 2016

Revised: 5 January 2017

Accepted: 7 January 2017

First Online: 10 March 2017

Competing interests

: The authors declare no conflict of interest.