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Spatial metrology of dopants in silicon with exact lattice site precision

Crossref DOI link: https://doi.org/10.1038/nnano.2016.83

Published Online: 2016-06-06

Published Print: 2016-09

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Usman, M.

Bocquel, J.

Salfi, J.

Voisin, B.

Tankasala, A.

Rahman, R.

Simmons, M. Y.

Rogge, S.

Hollenberg, L. C. L.
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Text and Data Mining valid from 2016-06-06
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Article History

Received: 22 December 2015

Accepted: 18 April 2016

First Online: 6 June 2016

Competing interests

: The authors declare no competing financial interests.