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Oxygen vacancy-assisted recovery process for increasing electron mobility in n-type BaSnO3 epitaxial thin films

Crossref DOI link: https://doi.org/10.1038/s41427-018-0038-1

Published Online: 2018-04-25

Published Print: 2018-04

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Yoon, Daseob

Yu, Sangbae

Son, Junwoo http://orcid.org/0000-0002-5363-1987
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Text and Data Mining valid from 2018-04-01
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Article History

Received: 27 October 2017

Revised: 12 March 2018

Accepted: 15 March 2018

First Online: 25 April 2018

Conflict of interest

: The authors declare that they have no conflict of interest.