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Contact-engineered reconfigurable two-dimensional Schottky junction field-effect transistor with low leakage currents

Crossref DOI link: https://doi.org/10.1038/s41467-023-39705-w

Published Online: 2023-07-17

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Zhou, Yaoqiang

Tong, Lei

Chen, Zefeng https://orcid.org/0000-0003-3096-4567
Tao, Li

Pang, Yue

Xu, Jian-Bin https://orcid.org/0000-0003-0509-9508
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Text and Data Mining valid from 2023-07-17

Version of Record valid from 2023-07-17
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Article History

Received: 16 January 2023

Accepted: 26 June 2023

First Online: 17 July 2023

Competing interests

: The authors declare no competing interests.