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High-performance p-type bilayer WSe2 field effect transistors by nitric oxide doping

Crossref DOI link: https://doi.org/10.1038/s41467-025-59684-4

Published Online: 2025-07-01

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Ghosh, Subir https://orcid.org/0000-0002-0883-4478
Sadaf, Muhtasim Ul Karim https://orcid.org/0000-0002-1673-9497
Graves, Andrew R. https://orcid.org/0000-0001-8711-8279
Zheng, Yikai https://orcid.org/0009-0000-7863-778X
Pannone, Andrew https://orcid.org/0000-0001-8446-9946
Ray, Samriddha

Cheng, Chung-Yu

Guevara, Jeremy

Redwing, Joan M. https://orcid.org/0000-0002-7906-452X
Das, Saptarshi https://orcid.org/0000-0002-0188-945X
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Text and Data Mining valid from 2025-07-01

Version of Record valid from 2025-07-01
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Article History

Received: 8 December 2024

Accepted: 1 May 2025

First Online: 1 July 2025

Competing interests

: The authors declare no competing interests.