Crossmark

Low temperature deposition of functional thin films on insulating substrates enabled by selective ion acceleration using synchronized floating potential HiPIMS

Crossref DOI link: https://doi.org/10.1038/s41467-025-59911-y

Published Online: 2025-05-21

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Patidar, Jyotish https://orcid.org/0009-0006-9240-197X
Pshyk, Oleksandr https://orcid.org/0000-0001-9237-6512
Thorwarth, Kerstin

Sommerhäuser, Lars

Siol, Sebastian https://orcid.org/0000-0002-0907-6525
Funding

Funding for this research was provided by:

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung (196980, 227945)
License Information

Text and Data Mining valid from 2025-05-21

Version of Record valid from 2025-05-21
More Information

Article History

Received: 22 August 2024

Accepted: 5 May 2025

First Online: 21 May 2025

Competing interests

: The authors declare that a related patent application has been filed: Title: “Method and apparatus for depositing a material layer”, application number: “EP 24163606”, status: “pending”. This patent covers the general concept of SFP-HiPIMS, especially the use of a transient substrate floating potential to accelerate film-forming ions. The applicant is Empa, the inventors are J.P. and S.S. The remaining authors declare no competing interests.

Document is current

Any future updates will be listed below