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Enabling static random-access memory cell scaling with monolithic 3D integration of 2D field-effect transistors

Crossref DOI link: https://doi.org/10.1038/s41467-025-59993-8

Published Online: 2025-05-26

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Sadaf, Muhtasim Ul Karim https://orcid.org/0000-0002-1673-9497
Chen, Ziheng

Subbulakshmi Radhakrishnan, Shiva

Sun, Yongwen https://orcid.org/0009-0007-9427-035X
Ding, Lei

Graves, Andrew R. https://orcid.org/0000-0001-8711-8279
Yang, Yang https://orcid.org/0000-0002-0025-5914
Redwing, Joan M. https://orcid.org/0000-0002-7906-452X
Das, Saptarshi https://orcid.org/0000-0002-0188-945X
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Text and Data Mining valid from 2025-05-26

Version of Record valid from 2025-05-26
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Article History

Received: 8 September 2024

Accepted: 12 May 2025

First Online: 26 May 2025

Competing interests

: The authors declare no competing interests.