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All-2D vertical metal-semiconductor field-effect transistor with sub-10 nm channel and contact lengths

Published Online: 2026-06-19

Authors

Zhang, Yi

Jia, Xionghui

Chen, Jiamin https://orcid.org/0009-0006-3768-4575
Li, Minglai

Li, Yanping

Dai, Lun https://orcid.org/0000-0002-6317-6340
Funding

Funding for this research was provided by:

National Natural Science Foundation of China (No. 62174005)
License Information

Text and Data Mining valid from 2026-06-19

Accepted Manuscript valid from 2026-06-19
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Article History

Received: 5 December 2025

Accepted: 10 June 2026

First Online: 19 June 2026

Competing interests

: The authors declare no competing interests.

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