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Gate-controlled spin-polarization reversal in high-performance nanoscale field-effect transistors with a bipolar magnetic semiconductor LaBr2 channel

Published Online: 2026-04-29

Authors

Wang, Shao-Xian

Kong, Ya-Qi

Jiang, Shun-Bo

Wang, Ming-Lang

Wei, Ming-Zhi

Chen, Gang

Wang, Chuan-Kui

Zhang, Guang-Ping
Funding

Funding for this research was provided by:

National Natural Science Foundation of China (22173052)
License Information

Text and Data Mining valid from 2026-04-29

Accepted Manuscript valid from 2026-04-29
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Article History

Received: 14 August 2025

Accepted: 14 April 2026

First Online: 29 April 2026

Competing interests

: The authors declare no competing interests.

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