Updates are available Correction dated 2018-05-03
Click to view Correction: https://doi.org/10.1038/s41560-018-0165-5
Updates are available Correction dated 2018-06-25
Click to view Correction: https://doi.org/10.1038/s41560-018-0208-y
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Authors
Cariou, Romain http://orcid.org/0000-0002-2873-2057
Benick, Jan
Feldmann, Frank
Höhn, Oliver
Hauser, Hubert
Beutel, Paul
Razek, Nasser
Wimplinger, Markus
Bläsi, Benedikt
Lackner, David
Hermle, Martin
Siefer, Gerald
Glunz, Stefan W.
Bett, Andreas W.
Dimroth, Frank http://orcid.org/0000-0002-3615-4437
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Article History
Received: 29 October 2017
Accepted: 27 February 2018
First Online: 2 April 2018
Change Date: 25 June 2018
Change Type: Correction
Change Details: In the version of this Article originally published, in the ‘Rear-side light trapping’ paragraph of the Methods section, the values of depth and fill factor were incorrectly given as 350 nm and 50%, respectively; instead, the values should have read 250 nm and 60%. This has now been corrected.
Change Date: 3 May 2018
Change Type: Correction
Change Details: In the version of this Article originally published, in the legend in Fig. 5a, the blue, green and red lines were incorrectly labelled as GaAs, Si and GaInP, respectively; instead, the labels should have read, respectively, GaInP, GaAs and Si. This has now been corrected.
Competing interests
: The authors N. Razek and M. Wimplinger are employed by EV Group E. Thallner GmbH, 4782 St Florian am Inn, Austria, which produces the wafer bonding machine used in this study.
