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Authors
Wang, Yani
Zhao, Chao
Gao, Xin http://orcid.org/0009-0005-3999-0106
Zheng, Liming http://orcid.org/0009-0008-3174-4922
Qian, Jun
Gao, Xiaoyin
Li, Jiade
Tang, Junchuan
Tan, Congwei
Wang, Jiahao
Zhu, Xuetao http://orcid.org/0000-0002-7563-1603
Guo, Jiandong http://orcid.org/0000-0002-7893-022X
Liu, Zhongfan http://orcid.org/0000-0001-5554-1902
Ding, Feng http://orcid.org/0000-0001-9153-9279
Peng, Hailin http://orcid.org/0000-0003-1569-0238
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Article History
Received: 22 February 2024
Accepted: 9 July 2024
First Online: 12 August 2024
Competing interests
: Y.W. and H.P. have filed the Chinese patent applications 2024108361139, 2024108364688, covering the growth of ultraflat hBN and fabrication of ultrathin hBN/HfO<sub>2</sub> dielectrics. The other authors declare no competing interests.
