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A nitride-based non-volatile memory enabled by electric-field-induced phase transition

Crossref DOI link: https://doi.org/10.1038/s41563-026-02565-y

Published Online: 2026-04-16

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Zeng, Tao https://orcid.org/0000-0002-8682-0426
Liu, Zhongran https://orcid.org/0009-0001-8744-5154
Gu, Youdi https://orcid.org/0009-0007-4348-6361
Dang, Bingjie https://orcid.org/0000-0002-3625-2782
Gao, Yuan

Xu, Tianlong

Li, Peng

Shi, Shu

Sun, Kaixuan

Zhu, Yao

Gong, Xiao https://orcid.org/0000-0002-9243-1937
Tian, He https://orcid.org/0000-0003-2108-3100
Chen, Jingsheng https://orcid.org/0000-0003-3188-2803
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Text and Data Mining valid from 2026-04-16

Version of Record valid from 2026-04-16
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Article History

Received: 5 May 2025

Accepted: 3 March 2026

First Online: 16 April 2026

Competing interests

: The authors declare no competing interests.