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Thickness-controlled black phosphorus tunnel field-effect transistor for low-power switches

Crossref DOI link: https://doi.org/10.1038/s41565-019-0623-7

Published Online: 2020-01-27

Published Print: 2020-03

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Kim, Seungho

Myeong, Gyuho

Shin, Wongil

Lim, Hongsik

Kim, Boram

Jin, Taehyeok

Chang, Sungjin

Watanabe, Kenji https://orcid.org/0000-0003-3701-8119
Taniguchi, Takashi

Cho, Sungjae https://orcid.org/0000-0003-2547-095X
Funding

Funding for this research was provided by:

National Research Foundation of Korea (2016R1A5A1008184)

National Research Foundation of Korea (2019M3F3A1A03079760)

National Research Foundation of Korea (2019M3F3A1A03079760)

National Research Foundation of Korea (2016R1A5A1008184)

National Research Foundation of Korea (2016R1A5A1008184)

National Research Foundation of Korea (2019M3F3A1A03079760)

National Research Foundation of Korea (2019M3F3A1A03079760)

National Research Foundation of Korea (2016R1A5A1008184)

National Research Foundation of Korea (2016R1A5A1008184)

National Research Foundation of Korea (2019M3F3A1A03079760)

National Research Foundation of Korea (2019M3F3A1A03079760)

National Research Foundation of Korea (2016R1A5A1008184)

National Research Foundation of Korea (2016R1A5A1008184)

National Research Foundation of Korea (2019M3F3A1A03079760)

MEXT | National Institute for Materials Science (JPMJCR15F3)

MEXT | National Institute for Materials Science (JPMJCR15F3)
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Article History

Received: 31 March 2019

Accepted: 11 December 2019

First Online: 27 January 2020

Competing interests

: The authors declare no competing interests.

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