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Highly gate-tuneable Rashba spin-orbit interaction in a gate-all-around InAs nanowire metal-oxide-semiconductor field-effect transistor

Published Online: 2017-04-19

Authors

Takase, K.

Ashikawa, Y.

Zhang, G.

Tateno, K.

Sasaki, S.
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Text and Data Mining valid from 2017-04-19

Version of Record valid from 2017-04-19
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Article History

Received: 16 November 2016

Accepted: 27 March 2017

First Online: 19 April 2017

Competing Interests

: The authors declare that they have no competing interests.

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