The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties
Crossref DOI link: https://doi.org/10.1038/s41598-017-02336-5
Published Online: 2017-05-18
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Park, Jozeph
Jeong, Hyun-Jun
Lee, Hyun-Mo
Nahm, Ho-Hyun
Park, Jin-Seong
Text and Data Mining valid from 2017-05-18
Version of Record valid from 2017-05-18
Article History
Received: 28 September 2016
Accepted: 11 April 2017
First Online: 18 May 2017
Competing Interests
: The authors declare that they have no competing interests.