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Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism

Crossref DOI link: https://doi.org/10.1038/s41598-017-05059-9

Published Online: 2017-07-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Chakrabarti, Somsubhra

Ginnaram, Sreekanth

Jana, Surajit

Wu, Zong-Yi

Singh, Kanishk

Roy, Anisha

Kumar, Pankaj

Maikap, Siddheswar

Qiu, Jian-Tai

Cheng, Hsin-Ming

Tsai, Ling-Na

Chang, Ya-Ling

Mahapatra, Rajat

Yang, Jer-Ren
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Text and Data Mining valid from 2017-07-05

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Article History

Received: 7 February 2017

Accepted: 22 May 2017

First Online: 5 July 2017

Competing Interests

: The authors declare that they have no competing interests.

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