Habituation/Fatigue behavior of a synapse memristor based on IGZO–HfO2 thin film
Crossref DOI link: https://doi.org/10.1038/s41598-017-09762-5
Published Online: 2017-08-24
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Jiang, Ran
Ma, Pengfei
Han, Zuyin
Du, Xianghao
Text and Data Mining valid from 2017-08-24
Version of Record valid from 2017-08-24
Article History
Received: 21 February 2017
Accepted: 31 July 2017
First Online: 24 August 2017
Competing Interests
: The authors declare that they have no competing interests.