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Electrically driven, highly efficient three-dimensional GaN-based light emitting diodes fabricated by self-aligned twofold epitaxial lateral overgrowth

Crossref DOI link: https://doi.org/10.1038/s41598-017-10086-7

Published Online: 2017-08-29

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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