Memory characteristics of silicon nanowire transistors generated by weak impact ionization
Crossref DOI link: https://doi.org/10.1038/s41598-017-12347-x
Published Online: 2017-09-29
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Lim, Doohyeok
Kim, Minsuk
Kim, Yoonjoong
Kim, Sangsig
Text and Data Mining valid from 2017-09-29
Version of Record valid from 2017-09-29
Article History
Received: 2 March 2017
Accepted: 5 September 2017
First Online: 29 September 2017
Competing Interests
: The authors declare that they have no competing interests.