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Modelling and Realization of a Water-Gated Field Effect Transistor (WG-FET) Using 16-nm-Thick Mono-Si Film

Crossref DOI link: https://doi.org/10.1038/s41598-017-12439-8

Published Online: 2017-09-22

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Sonmez, Bedri Gurkan https://orcid.org/0000-0003-1812-512X
Ertop, Ozan

Mutlu, Senol https://orcid.org/0000-0003-4515-5770
License Information

Text and Data Mining valid from 2017-09-22

Version of Record valid from 2017-09-22
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Article History

Received: 15 June 2017

Accepted: 6 September 2017

First Online: 22 September 2017

Competing Interests

: The authors declare that they have no competing interests.