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A Hybrid Gate Dielectrics of Ion Gel with Ultra-Thin Passivation Layer for High-Performance Transistors Based on Two-Dimensional Semiconductor Channels

Crossref DOI link: https://doi.org/10.1038/s41598-017-14649-6

Published Online: 2017-10-27

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Jo, Hyunjin

Choi, Jeong-Hun

Hyun, Cheol-Min

Seo, Seung-Young

Kim, Da Young

Kim, Chang-Min

Lee, Myoung-Jae https://orcid.org/0000-0003-2626-0460
Kwon, Jung-Dae

Moon, Hyoung-Seok

Kwon, Se-Hun

Ahn, Ji-Hoon
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Text and Data Mining valid from 2017-10-27

Version of Record valid from 2017-10-27
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Article History

Received: 23 August 2017

Accepted: 9 October 2017

First Online: 27 October 2017

Competing Interests

: The authors declare that they have no competing interests.

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