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Electron-blocking by the potential barrier originated from the asymmetrical local density of state in the oxide semiconductor

Crossref DOI link: https://doi.org/10.1038/s41598-017-18420-9

Published Online: 2017-12-21

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Lee, Hyeon-Jun http://orcid.org/0000-0002-6790-4413
Abe, Katsumi

Kim, Jun Seo

Lee, Myoung-Jae http://orcid.org/0000-0003-2626-0460
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Text and Data Mining valid from 2017-12-21

Version of Record valid from 2017-12-21
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Article History

Received: 2 November 2017

Accepted: 11 December 2017

First Online: 21 December 2017

Competing Interests

: The authors declare that they have no competing interests.