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Hexagonal MoTe2 with Amorphous BN Passivation Layer for Improved Oxidation Resistance and Endurance of 2D Field Effect Transistors

Published Online: 2018-06-06

Authors

Sirota, Benjamin

Glavin, Nicholas

Krylyuk, Sergiy

Davydov, Albert V.

Voevodin, Andrey A.
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Text and Data Mining valid from 2018-06-06

Version of Record valid from 2018-06-06
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Article History

Received: 25 January 2018

Accepted: 18 May 2018

First Online: 6 June 2018

Competing Interests

: The authors declare no competing interests.

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