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Theoretical predicted high-thermal-conductivity cubic Si3N4 and Ge3N4: promising substrate materials for high-power electronic devices

Published Online: 2018-09-26

Authors

Xiang, Huimin

Feng, Zhihai

Li, Zhongping

Zhou, Yanchun https://orcid.org/0000-0001-5676-5676
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Text and Data Mining valid from 2018-09-26

Version of Record valid from 2018-09-26
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Article History

Received: 10 January 2018

Accepted: 15 May 2018

First Online: 26 September 2018

Competing Interests

: The authors declare no competing interests.

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