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Conduction Mechanisms on High Retention Annealed MgO-based Resistive Switching Memory Devices

Crossref DOI link: https://doi.org/10.1038/s41598-018-33198-0

Published Online: 2018-10-03

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Loy, D. J. J. https://orcid.org/0000-0001-7651-3214
Dananjaya, P. A.

Hong, X. L.

Shum, D. P.

Lew, W. S. https://orcid.org/0000-0002-5161-741X
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Text and Data Mining valid from 2018-10-03

Version of Record valid from 2018-10-03
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Article History

Received: 29 May 2018

Accepted: 25 September 2018

First Online: 3 October 2018

Competing Interests

: The authors declare no competing interests.