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Description and Verification of the Fundamental Current Mechanisms in Silicon Carbide Schottky Barrier Diodes

Published Online: 2019-03-06

Authors

Nicholls, Jordan

Dimitrijev, Sima http://orcid.org/0000-0002-4514-0336
Tanner, Philip

Han, Jisheng
Funding

Funding for this research was provided by:

Department of Education and Training | Australian Research Council (ARC LP 50100525, ARC LP 50100525, ARC LP 50100525, ARC LP 50100525)
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Text and Data Mining valid from 2019-03-06

Version of Record valid from 2019-03-06
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Article History

Received: 23 August 2018

Accepted: 8 February 2019

First Online: 6 March 2019

Competing Interests

: The authors declare no competing interests.

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