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Monolayer MoS2 field effect transistor with low Schottky barrier height with ferromagnetic metal contacts

Published Online: 2019-11-19

Authors

Gupta, Sachin

Rortais, F.

Ohshima, R.

Ando, Y.

Endo, T.

Miyata, Y.

Shiraishi, M.
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Text and Data Mining valid from 2019-11-19

Version of Record valid from 2019-11-19
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Article History

Received: 26 April 2019

Accepted: 25 October 2019

First Online: 19 November 2019

Competing interests

: The authors declare no competing interests.

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