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Effective Schottky barrier lowering of NiGe/p-Ge(100) using Terbium interlayer structure for high performance p-type MOSFETs

Crossref DOI link: https://doi.org/10.1038/s41598-020-61011-4

Published Online: 2020-03-04

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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