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Temperature-dependent charge-carrier transport between Si-δ-doped layers and AlGaAs/InGaAs/AlGaAs quantum well with various space layer thicknesses measured by Hall-effect analysis

Crossref DOI link: https://doi.org/10.1038/s41598-020-69153-1

Published Online: 2020-07-27

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Su, Wilson Yeung-Sy

Lu, Victor Chien-Pin

Wu, Chii-Bin

Wang, Jyh-Shyang

Shen, Ji-Lin

Chiu, Kuan-Cheng
Funding

Funding for this research was provided by:

Ministry of Science and Technology of ROC (MOST 107-2622-M-033-001-CC2, MOST 106-2112-M-033-009-MY3)
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Article History

Received: 4 November 2019

Accepted: 8 July 2020

First Online: 27 July 2020

Competing interests

: The authors declare no competing interests.

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