Electrical and dielectric parameters in TiO2-NW/Ge-NW heterostructure MOS device synthesized by glancing angle deposition technique
Crossref DOI link: https://doi.org/10.1038/s41598-021-99354-1
Published Online: 2021-10-06
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Singh, H. Manas
Lim, Ying Ying
Chinnamuthu, P.
Text and Data Mining valid from 2021-10-06
Version of Record valid from 2021-10-06
Article History
Received: 31 May 2021
Accepted: 14 September 2021
First Online: 6 October 2021
Competing interests
: The authors declare no competing interests.