Crossmark

Device modeling of two-steps oxygen anneal-based submicron InGaZnO back-end-of-line field-effect transistor enabling short-channel effects suppression

Crossref DOI link: https://doi.org/10.1038/s41598-022-23951-x

Published Online: 2022-11-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Kim, Donguk

Kim, Je-Hyuk

Choi, Woo Sik

Yang, Tae Jun

Jang, Jun Tae

Belmonte, Attilio

Rassoul, Nouredine

Subhechha, Subhali

Delhougne, Romain

Kar, Gouri Sankar

Lee, Wonsok

Cho, Min Hee

Ha, Daewon

Kim, Dae Hwan
Funding

Funding for this research was provided by:

Samsung Electronics Co., Ltd (IO200424-07306-01)

National Research Foundation of Korea (2016R1A5A1012966)

National Research Foundation of Korea,South Korea (2020R1A2B5B01001979)

the Institute of Information and Communications Technology Planning and Evaluation (2021-0-01764)
License Information

Text and Data Mining valid from 2022-11-12

Version of Record valid from 2022-11-12
More Information

Article History

Received: 18 August 2022

Accepted: 8 November 2022

First Online: 12 November 2022

Competing interests

: The authors declare no competing interests.

Document is current

Any future updates will be listed below