Document is current

Any future updates will be listed below

Exploration of underlap induced high-k spacer with gate stack on strain channel cylindrical nanowire FET for enriched performance

Crossref DOI link: https://doi.org/10.1038/s41598-024-53487-1

Published Online: 2024-02-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

About CrossMark