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Properties of phosphorus-boron co-doped c-Si quantum dots/SiNx:H thin film prepared by PECVD in-situ deposition

Crossref DOI link: https://doi.org/10.1038/s41598-024-72560-3

Published Online: 2024-09-16

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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