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Cation composition ratio and channel length effects on bias stress instability in amorphous InGaZnO back-end-of-line field-effect transistors

Crossref DOI link: https://doi.org/10.1038/s41598-024-81556-y

Published Online: 2024-12-28

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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