Document is current

Any future updates will be listed below

Modeling of total ionizing dose (TID) effects on the nonuniform distribution of Si/SiO2 interface trap energy states in MOS devices

Crossref DOI link: https://doi.org/10.1038/s41598-025-01325-3

Published Online: 2025-05-16

Update policy: https://doi.org/10.1007/springer_crossmark_policy

About CrossMark