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Design and analysis of high-k wrapped underlap induced GaN multi-channel GAA nanosheet FET for enhanced performance with cut-off frequency in THz range

Crossref DOI link: https://doi.org/10.1038/s41598-025-28275-0

Published Online: 2025-12-24

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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