Document is current

Any future updates will be listed below

Controlled oxidation levels in graphene oxide to achieve forming-free and analog resistive switching in RRAM

Crossref DOI link: https://doi.org/10.1038/s41598-025-32232-2

Published Online: 2025-12-22

Update policy: https://doi.org/10.1007/springer_crossmark_policy

About CrossMark