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DFT-based exploration of pressure effects on the physical properties of Zinc-blende materials XM (X = Ga, In; M = As, N) for optoelectronic devices

Crossref DOI link: https://doi.org/10.1038/s41598-025-33576-5

Published Online: 2026-01-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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