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Influence of metal–semiconductor interface treatments and absorber structure on the performance and reliability of uni-traveling-carrier photodiodes (UTC-PDs)

Crossref DOI link: https://doi.org/10.1038/s41598-025-34935-y

Published Online: 2026-01-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Kang, Soo Cheol

Cho, Jin Chul

Lee, Eui Su

Park, Dong Woo
Funding

Funding for this research was provided by:

Ministry of Science and ICT, South Korea (RS-2024-00411969)

Ministry of Science and ICT, South Korea (RS-2024-00411969)

Ministry of Science and ICT, South Korea (RS-2024-00411969)

Korean government (25ZB1300)

Korean government (25ZB1300)

Korean government (25ZB1300)

Korean government (25ZB1300)
License Information

Text and Data Mining valid from 2026-01-05

Accepted Manuscript valid from 2026-01-05
More Information

Article History

Received: 19 November 2025

Accepted: 31 December 2025

First Online: 5 January 2026

Competing interests

: The authors declare no competing interests.

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