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Wafer-scale formation of MoS2 with controlled thickness and high uniformity via conversion of MoOx using H2S sulfurization and subsequent crystallization

Crossref DOI link: https://doi.org/10.1038/s41598-026-38161-y

Published Online: 2026-02-05

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Okada, Naoya

Tanabe, Shinichi

Miura, Hitoshi

Cheng, Hao

Huang, Yumin

Warashina, Hisashi

Fukazawa, Atsuki

Maehara, Hiroki

Irisawa, Toshifumi
Funding

Funding for this research was provided by:

New Energy and Industrial Technology Development Organization (JPNP20017)

New Energy and Industrial Technology Development Organization (JPNP20017)
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Text and Data Mining valid from 2026-02-05

Version of Record valid from 2026-02-20
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Article History

Received: 21 November 2025

Accepted: 29 January 2026

First Online: 5 February 2026

Declarations

:

: The authors declare no competing interests.

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