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Author Correction: Direct growth of orthorhombic Hf0.5Zr0.5O2 thin films for hysteresis-free MoS2 negative capacitance field-effect transistors

Crossref DOI link: https://doi.org/10.1038/s41699-021-00240-1

Published Online: 2021-05-26

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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