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Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors

Crossref DOI link: https://doi.org/10.1038/s41699-024-00445-0

Published Online: 2024-02-02

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Illarionov, Yu. Yu.

Karl, A. http://orcid.org/0000-0003-2221-8038
Smets, Q. http://orcid.org/0000-0002-2356-5915
Kaczer, B.

Knobloch, T. http://orcid.org/0000-0001-5156-9510
Panarella, L.

Schram, T. http://orcid.org/0000-0003-1533-7055
Brems, S. http://orcid.org/0000-0002-0282-8528
Cott, D.

Asselberghs, I.

Grasser, T. http://orcid.org/0000-0001-6536-2238
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Text and Data Mining valid from 2024-02-02

Version of Record valid from 2024-02-02
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Article History

Received: 5 September 2023

Accepted: 16 January 2024

First Online: 2 February 2024

Competing interests

: The authors declare no competing interests.