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High-throughput numerical modeling of the tunable synaptic behavior in 2D MoS2 memristive devices

Crossref DOI link: https://doi.org/10.1038/s41699-025-00530-y

Published Online: 2025-02-21

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Spetzler, Benjamin

Sangwan, Vinod K. https://orcid.org/0000-0002-5623-5285
Hersam, Mark C. https://orcid.org/0000-0003-4120-1426
Ziegler, Martin
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Text and Data Mining valid from 2025-02-21

Version of Record valid from 2025-02-21
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Article History

Received: 31 August 2024

Accepted: 16 January 2025

First Online: 21 February 2025

Competing interests

: The authors declare no competing interests.