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High-performance molybdenum disulfide transistors with channel and contact lengths below 35 nm

Crossref DOI link: https://doi.org/10.1038/s41928-025-01499-8

Published Online: 2025-12-17

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Sakib, Najam U https://orcid.org/0009-0002-2148-7340
Chen, Chen

Ding, Lei https://orcid.org/0000-0001-7842-5277
Yang, Yang

Redwing, Joan M. https://orcid.org/0000-0002-7906-452X
Das, Saptarshi https://orcid.org/0000-0002-0188-945X
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Text and Data Mining valid from 2025-12-17

Version of Record valid from 2025-12-17
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Article History

Received: 12 December 2024

Accepted: 13 October 2025

First Online: 17 December 2025

Competing interests

: The authors declare no competing interests.