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Controlled oxygen vacancy electrode reservoir for robust WO3-based memory devices

Crossref DOI link: https://doi.org/10.1038/s43246-026-01143-8

Published Online: 2026-04-06

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Yuan, Ziyi https://orcid.org/0000-0002-4854-4926
Bakhit, Babak https://orcid.org/0000-0002-3083-7536
Lu, Jiahao

Liu, Yi-Xuan https://orcid.org/0000-0002-9522-8651
Jan, Atif

Li, Xinjuan

Varghese, Abin

Rajendran, Bipin https://orcid.org/0000-0002-2960-6909
Ducati, Caterina https://orcid.org/0000-0003-3366-6442
Di Martino, Giuliana https://orcid.org/0000-0001-5766-8384
Hellenbrand, Markus https://orcid.org/0000-0002-5811-5228
MacManus-Driscoll, Judith Louise https://orcid.org/0000-0003-4987-6620
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Text and Data Mining valid from 2026-04-06

Accepted Manuscript valid from 2026-04-06
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Article History

Received: 1 September 2025

Accepted: 17 March 2026

First Online: 6 April 2026

Competing interests

: All authors declare no competing interests.