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Combining quasi-one-dimensional modeling with region-wise structure analysis for rapid technology computer-aided design simulations of gate-all-around MOSFETs

Crossref DOI link: https://doi.org/10.1038/s44172-025-00509-z

Published Online: 2025-09-25

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Lee, Kwang-Woon https://orcid.org/0000-0001-7779-0301
Kim, In Ki https://orcid.org/0000-0002-3563-3380
Jung, Seung-Woo https://orcid.org/0009-0008-2755-160X
Jang, Min-Seo https://orcid.org/0009-0009-2427-1095
Hong, Sung-Min https://orcid.org/0000-0002-1840-085X
Funding

Funding for this research was provided by:

National Research Foundation of Korea (NRF-2023R1A2C2007417)
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Text and Data Mining valid from 2025-09-25

Version of Record valid from 2025-09-25
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Article History

Received: 14 April 2025

Accepted: 4 September 2025

First Online: 25 September 2025

Competing interests

: The authors declare no competing interests.

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