Updates are available Erratum dated 2015-03-27

Article History

Received: 19 September 2014

Accepted: 27 November 2014

First Online: 13 January 2015

Change Date: 27 March 2015

Change Type: Update

Change Details: A correction has been published and is appended to both the HTML and PDF versions of this paper. The error has not been fixed in the paper.

Change Date: 27 March 2015

Change Type: Erratum

Change Details: Hexagonal boron nitride nanosheets (<i>h</i>-BNNS) have been proposed as an ideal substrate for graphene-based electronic devices, but the synthesis of large and homogeneous <i>h</i>-BNNS is still challenging. In this contribution, we report a facile synthesis of few-layer <i>h</i>-BNNS on melted copper via an atmospheric pressure chemical vapor deposition process. Comparative studies confirm the advantage of using melted copper over solid copper as a catalyst substrate. The former leads to the formation of single crystalline <i>h</i>-BNNS that is several microns in size and mostly in mono- and bi-layer forms, in contrast to the polycrystalline and mixed multiple layers (1–10) yielded by the latter. This difference is likely to be due to the significantly reduced and uniformly distributed nucleation sites on the smooth melted surface, in contrast to the large amounts of unevenly distributed nucleation sites that are associated with grain boundaries and other defects on the solid surface. This synthesis is expected to contribute to the development of large-scale manufacturing of <i>h</i>-BNNS/graphene-based electronics.

Competing interests

: The authors declare no competing financial interests.